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| SHINDENGEN Switching Power Transistor HFX Series 2SC4231 (TP2V80HFX) 2A NPN OUTLINE DIMENSIONS Case : ITO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Junction TemperatureTj 150 *Z Collector to Base Voltage V 1200 V CBO Collector to Emitter Voltage V 800 V CEO Emitter to Base Voltage V 7 V EBO Collector Current DC I 2 A C Collector Current Peak I 4 CP Base Current DC I 1 A B Base Current Peak I 2 BP Total Transistor DissipationTc = 25*Z P 30 W T Dielectric Strength Vdis Terminals to case, AC 12minute kV Mounting Torque TOR (Recommended torque 0.5 Nm : 0.3Nm) *oeElectrical Characteristics (Tc=25*Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sustaining0.1A V (sus)I = Voltage Min 800 V CEO C Collector Cutoff Current At rated Voltage I Max 0.1 mA CBO I Max 0.1 CEO Emitter Cutoff Current I At rated Voltage Max 0.1 mA EBO DC Current Gain h = Min 8 CE C 1A FE V = 5V, I h V = 5V, I = 1mA Min 7 FEL CE C Collector to Emitter Saturation1A V (sat) I = Voltage Max 1.0 V CE C Base to Emitter Saturation Voltage V (sat) I = 0.2A Max 1.5 V BE B Thermal Resistance AEjc Junction to case Max 4.16 *Z/W Transition Frequency fT V = 10V, 0.2A = TYP 8 MHz CE C I Turn on Time ton I = 1A Max 0.5 C Storage Time ts I = 0.2A,0.4A = Max 3.5 Es B1 B2 I Fall Time tf R= 250, 4V =V Max 0.3 L BB2 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SC4231 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 10 0C -25C DC Current Gain hFE -55C 1 0.001 0.01 0.1 1 4 Collector Current IC [A] 2SC4231 Saturation Voltage 3 0.5A 1A 2A 4A 2.5 3 IC = 0.25A 2.5 2 2 1.5 4A 0.5A 1A 2A 1.5 Collector-Emitter Voltage VCE [V] IC = 0.25A 0.5 0.5 Tc = 25C 0 0.1 1 2 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] 1 1 2SC4231 10 Switching Time - IC ts 1 Switching Time tSW [s] ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 250V Tc = 25C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4231 10 Switching Time - VCC ts 1 Switching Time tSW [s] ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300 Collector Voltage VCC [V] 2SC4231 10 Switching Time - Tc ts 1 Switching Time tSW [s] ton tf 0.1 IC = 1A IB1 = 0.2A IB2 = 0.4A VBB2 = 4V R L = 250 0.01 0 50 100 150 Case Temperature Tc [C] 2SC4231 10 L-Load Switching Time - IC ts 1 Switching Time tSW [s] tf + tvs 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4231 10 L-Load Switching Time - IC (At High Temperature) ts 1 Switching Time tSW [s] tf + tvs tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100C 0.01 0 0.5 1 1.5 2 Collector Current IC [A] 2SC4231 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-3 10-2 10-4 10-1 100 101 Time t [s] 2SC4231 4 10ms Forward Bias SOA 1ms 150s 50s DC PT limit 1 Collector Current IC [A] 0.1 IS/B limit Tc = 25C Single Pulse 0.01 1 10 100 800 Collector-Emitter Voltage VCE [V] 2SC4231 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC4231 4 Reverse Bias SOA 3.5 3 Collector Current IC [A] 2.5 2 1.5 1 IB1 = 0.25IC IB2 = 0.3A VBB2 = 5V Tc < 150C 0.5 0 0 200 400 600 800 1000 1200 Collector-Emitter Voltage VCE [V] |
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